Evaluate the thermal properties and stability (film stress) of thin films up to 500 degree C in inert gas. 200mm or 300mm chamber. Manually loading.

Rapid Thermal Mechanical Characterization of novel materials. Simulataneous extraction of stress hysteresis, thermal desorption, film shrinkage and reflectivity data during thermal cycling in vaccum up to 900 degree C. Fully automated cassette to cassette system for 300mm wafers. SECS/GEM option.

Rapid Thermal Mechanical Characterization of novel materials. Simulataneous extraction of stress hysteresis, thermal desorption, film shrinkage and reflectivity data during thermal cycling in vacuum up to 900 degree C. Manually loading system.

Modified Edge Liftoff Test to measure adhesion of thin film and thin film stacks on a wide variety of crystalline and non-crystaline substrates, such as Silicon, III-V compounds, glass, etc. Suitable for mid adhesion samples.

4-Point Bend film adhesion test. Measurement in air or liquid. For low to mid adhesion samples. Multi-chamber option for rapid testing.

4-Point Probe Technique for measuring the sheet resistance of epi, metal films, substrates. Table top and fully automated cassette to cassette systems available.

Micro Raman system  for lattice level strain and material composition measurement. High spectral resolution (0.02 cm-1) and sub micron lateral resolution. Measurement of through silicon via (TSV) keep out zone, local stress and composition profiling.  Fully automated C2C system.

A precision-engineered, 3-axis atmospheric wafer handling robot designed for reliable, high-throughput substrate transfer. Supports 100–00 mm wafers, 360° rotation, and seamless integration with semiconductor metrology and automation systems.

A high-precision wafer pre-aligner supporting 150–00 mm substrates.

Featuring alignment accuracy of ±0.01 mm and cycle times under 4 seconds, it provides fast and reliable wafer positioning for automated semiconductor processing.

FASBasic and FASAdvanced software solutions enable standardized SECS/GEM communication between semiconductor equipment and factory host systems.

Supports equipment monitoring, event reporting, remote control, and advanced factory automation.

An advanced microwave annealing platform designed for semiconductor thermal processing with reduced thermal budget.

Potential applications include dopant activation, dielectric film densification, selective heating, and advanced semiconductor packaging processes.

Dimensional metrology system for 3D-IC application: Through Silicon Via (TSV) depth, top CD, bottom CD, remaining silicon thickness (RST), copper pillar height, bump height, and many more.  Fully automated cassette to cassette system for 300mm wafers. SECS/GEM option. Warp, Roughness, and Thin Film Thickness measurement options.

New high speed, high accuracy non-contact characterization of thin wafers, through silicon vias (TSV), bumps, MEMS structures and novel materials. SIC 8108 VITE can be employed in the front-end and backend. It provides thickness, TTV, and topography of Si and compound materials, edge trim geometry, multilayer thickness and topography of wafers on tape, on sapphie,or on glass. Measurement of warp of highly warped wafers and measurement of  thick films.