
Stress Hysteresis Measurement up to 500C for thermal property and stability tests of thin films in inert gas. Non-Contact Laser Scanning Technology.

Stress Hysteresis in vacuum or gas up to 900C for the study of annealing cycles. Thermal Desorption, Film Shrinkage, Reflectivity, and Resistivity options provide additional insight to causes of material changes with temperature. NEW: Optional wafer rotation offers unique 2D/3D mapping to study wafer deformation as a function of temperature.

Local and Lattice Stress Measurement, Die level Topography. For in-die and in-device stress and composition control.